Quick Recap — Capacitors and Dielectrics

  • Parallel plate: C=ε0AdC=\dfrac{\varepsilon_0 A}{d}; with a full dielectric CKCC\to KC. Isolated sphere C=4πε0RC=4\pi\varepsilon_0 R.
  • Slab of thickness tt (t<dt<d): C=ε0Adt+t/KC=\dfrac{\varepsilon_0 A}{d-t+t/K} (position-independent). A conducting slab uses KK\to\infty: C=ε0AdtC=\dfrac{\varepsilon_0 A}{d-t}.
  • Two dielectrics side by side (parallel): C=ε0A2d(K1+K2)C=\dfrac{\varepsilon_0 A}{2d}(K_1+K_2); stacked (series): C=2ε0AdK1K2K1+K2C=\dfrac{2\varepsilon_0 A}{d}\cdot\dfrac{K_1K_2}{K_1+K_2}.
  • Isolated (QQ fixed): raising dd raises UU (U=Q2d2ε0AU=\dfrac{Q^2 d}{2\varepsilon_0 A}); inserting KK lowers UU to U/KU/K. Battery-connected (VV fixed): raising dd lowers UU; inserting KK raises UU to KUKU.
  • Energy density u=12ε0E2u=\tfrac12\varepsilon_0 E^2; electrostatic pressure on a plate =σ22ε0=\dfrac{\sigma^2}{2\varepsilon_0}.

Worked mini-example. A=100A=100 cm2=102^2=10^{-2} m2^2, d=1d=1 mm: C=(8.85×1012)(102)103=88.5C=\dfrac{(8.85\times10^{-12})(10^{-2})}{10^{-3}}=88.5 pF; adding a K=4K=4 dielectric makes it 354354 pF.