Board Exam question bank

This section is your Board-exam workout room for Current Electricity. It is a curated bank of 35 questions in the exact format that appears on CBSE and state-board papers:

  • Very Short Answer (VSA): 1 mark — one-line definitions or facts.
  • Short Answer (SA-I): 2 marks — 2–3 sentence explanations or small numericals.
  • Short Answer (SA-II): 3 marks — derivations of intermediate length, or detailed explanations.
  • Long Answer (LA): 5 marks — full derivations with circuit diagrams, or multi-part conceptual questions.

How to use this section

Board examiners love specific derivations and definitions. Memorise the structure of each answer — not just the result. A 5-mark derivation loses 1–2 marks if you skip labelling vectors, state Kirchhoff's rules, or forget to give units. Treat this as a writing exercise, not just a reading one: re-derive each one on paper.

Legend used below:

  • [Important] — these show up year after year. Prioritise these if you're short on time.
  • [CBSE] — a question that has appeared in a past CBSE paper. The year is noted only when certain.
  • [Diagram required] — drawing the circuit is worth marks. Skip the diagram, lose marks.

Every answer follows the Board-graded format: statement / law / derivation steps / final boxed result / one-line physical meaning. Reading one answer at a time, then closing the book and re-writing it from memory, is the single best study technique before the Board exam. Good luck!

VSA — 1 mark

Q1. Define drift velocity. [Important]

The drift velocity is the average velocity with which free electrons in a conductor drift along the direction opposite to the applied electric field, superimposed on their random thermal motion.

vd=eEτm\vec{v}_d = \frac{-e\vec{E}\tau}{m}

Its SI unit is m/s, and its typical magnitude in a current-carrying copper wire is 104\sim 10^{-4} m/s.

Q2. State Ohm's law.

At constant temperature (and subject to no chemical or physical changes), the current II flowing through an ohmic conductor is directly proportional to the potential difference VV across its ends:

V=IRV = IR

where RR is the resistance (a constant for the conductor at fixed temperature).

Q3. Define electrical resistivity.

Resistivity (or specific resistance) ρ\rho of a material is the resistance offered by a specimen of unit length and unit cross-sectional area. It relates the resistance to the geometry:

R=ρLAR = \rho \frac{L}{A}

SI unit: ohm-metre (Ω·m). It depends on the material and temperature but not on the size or shape of the specimen.

Q4. Define EMF of a cell.

The electromotive force (EMF) ε\varepsilon of a cell is the work done per unit charge by the non-electrostatic force inside the cell in moving a unit positive charge from its negative terminal to its positive terminal:

ε=Wq\varepsilon = \frac{W}{q}

SI unit: volt (V). Equivalently, ε\varepsilon is the terminal voltage of the cell when no current is drawn from it (open circuit).

Q5. State the two Kirchhoff's rules. [Important]

Junction rule (KCL): At any junction in a circuit, the algebraic sum of currents is zero (consequence of charge conservation): I=0\sum I = 0

Loop rule (KVL): The algebraic sum of potential differences around any closed loop is zero (consequence of energy conservation): ΔV=0\sum \Delta V = 0

Q6. Define mobility of a charge carrier.

Mobility μ\mu is defined as the drift velocity acquired per unit applied electric field:

μ=vdE\mu = \frac{|v_d|}{E}

SI unit: m²/(V·s) (or cm²/(V·s) in practice). A higher mobility means the charge carriers respond more strongly to a given electric field.

Q7. What is the SI unit of potential gradient on a potentiometer wire?

The potential gradient kk is the fall of potential per unit length along the potentiometer wire:

k=Vk = \frac{V}{\ell}

SI unit: volt per metre (V/m) — or more commonly volt per centimetre (V/cm) or millivolt per centimetre (mV/cm) in practice.

SA-I — 2 marks

Q8. Distinguish between EMF and terminal voltage of a cell. [Important]

EMF (ε\varepsilon) Terminal voltage (VV)
Property of the cell (depends on chemistry). Depends on the external circuit.
Measured when no current flows (I=0I = 0). Measured when current is flowing.
Always equal to maximum possible voltage. V=εIrV = \varepsilon - Ir while discharging; V=ε+IrV = \varepsilon + Ir while charging.

They are equal only in open circuit (I=0I = 0). When a cell is delivering current, V<εV < \varepsilon; when it's being charged, V>εV > \varepsilon.

Q9. Why is the current flowing through a conductor constant even though the drift velocity is very small (104\sim 10^{-4} m/s)?

The free-electron number density nn in a metallic conductor is extremely large — about 102910^{29} electrons per cubic metre. Even with a tiny drift velocity, the product I=neAvdI = neAv_d gives a macroscopic current. Further, an electric field sets up almost instantaneously throughout the conductor, so electrons all along the wire begin to drift together. Thus the current is steady even though individual electrons move slowly.

Q10. Why is manganin or constantan used for making standard resistors?

Manganin (Cu-Mn-Ni alloy) and constantan (Cu-Ni alloy) are preferred for standard resistors because:

  • They have a very low temperature coefficient of resistance (α105\alpha \approx 10^{-5} /°C), so their resistance barely changes with temperature. This ensures the standard value is stable.
  • They have a high resistivity, so a small coil of wire gives a reasonable resistance value.

A pure copper wire, in contrast, has α4×103\alpha \approx 4 \times 10^{-3} /°C — its resistance can change by several percent over the range of room temperatures.

Q11. Why does the resistance of a conductor increase with temperature, while that of a semiconductor decreases?

In a metal, increased temperature causes more frequent collisions between free electrons and lattice ions, shortening the relaxation time τ\tau. Since ρ=m/(ne2τ)\rho = m/(ne^2\tau) and nn is essentially constant, ρ\rho (and hence RR) increases.

In a semiconductor, increased temperature frees many more charge carriers, so nn increases sharply. This increase in nn far outweighs any reduction in τ\tau, so ρ\rho decreases. Hence semiconductors have a negative temperature coefficient of resistance.

Q12. State and briefly explain the principle of the potentiometer. [Important]

Principle: The potential difference across any portion of a uniform wire carrying a steady current is directly proportional to the length of that portion.

V,V=kV \propto \ell, \quad V = k\ell

where kk is the potential gradient. Because the setup is a null method (galvanometer reads zero at balance, so no current flows from the test cell), the reading equals the true EMF — not a loaded terminal voltage — making the potentiometer ideal for precise EMF measurements.

Q13. A voltmeter of finite resistance, when connected across a cell, reads a voltage slightly less than the true EMF of the cell. Why?

A voltmeter has finite resistance RVR_V. When connected across a cell of EMF ε\varepsilon and internal resistance rr, it draws a small current I=ε/(RV+r)I = \varepsilon/(R_V + r). Its reading is the terminal voltage:

V=IRV=εRVRV+r<εV = IR_V = \varepsilon \cdot \frac{R_V}{R_V + r} < \varepsilon

To minimise this loading error, use a voltmeter with RVrR_V \gg r — or use a potentiometer, which draws zero current at balance.

SA-II — 3 marks

Q14. Derive the expression I=neAvdI = neAv_d relating current to drift velocity. [Important] [Diagram required] [CBSE recurring]

Setup. Consider a conductor of uniform cross-section AA, with free-electron number density nn. In steady state, electrons drift with velocity vdv_d under an applied field.

Derivation. In time Δt\Delta t, each electron moves a distance vdΔtv_d \Delta t. Consider a cylindrical volume of length vdΔtv_d \Delta t and cross-sectional area AA adjacent to a cross-section of the wire. The number of electrons in this volume is:

N=n(AvdΔt)=nAvdΔtN = n \cdot (A \cdot v_d \Delta t) = n A v_d \Delta t

Each electron carries charge ee. So the total charge crossing any cross-section in time Δt\Delta t:

ΔQ=(nAvdΔt)e\Delta Q = (n A v_d \Delta t)e

Current:

I=ΔQΔt=neAvd\boxed{\, I = \frac{\Delta Q}{\Delta t} = n e A v_d \, }

Physical meaning. Current is set by the number density nn, charge per carrier ee, cross-section AA, and drift speed vdv_d — not by the speed of individual electrons' random motion.

Q15. Derive the expression for drift velocity vd=eEτ/mv_d = eE\tau/m. [Important] [CBSE recurring]

Setup. An electron (charge e-e, mass mm) in a conductor experiences an electric field E\vec{E}, giving it an acceleration a=eE/m\vec{a} = -e\vec{E}/m.

Derivation. The electron's velocity vi\vec{v}_i just after its ii-th collision is essentially random, so on averaging over many electrons, vi=0\langle \vec{v}_i \rangle = 0. Between two successive collisions, the electron accelerates for a time tit_i with average value τ\tau.

v=vi+ati\vec{v} = \vec{v}_i + \vec{a}t_i

Averaging over all electrons:

v=vi+ati=0+aτ=eEτm\langle \vec{v} \rangle = \langle \vec{v}_i \rangle + \vec{a}\langle t_i \rangle = 0 + \vec{a}\tau = \frac{-e\vec{E}\tau}{m}

This average is the drift velocity. Taking magnitudes:

vd=eEτm\boxed{\, v_d = \frac{eE\tau}{m} \, }

Physical meaning. Shorter relaxation time means electrons are interrupted more frequently, giving smaller drift velocity and larger resistance.

Q16. Using the drift velocity formula, derive Ohm's law V=IRV = IR and the expression ρ=m/(ne2τ)\rho = m/(ne^2\tau) for resistivity. [Important] [CBSE]

Derivation. Start with I=neAvdI = neAv_d and vd=eEτ/mv_d = eE\tau/m:

I=neAeEτm=ne2AτmEI = neA \cdot \frac{eE\tau}{m} = \frac{n e^2 A \tau}{m}E

For a conductor of length LL, E=V/LE = V/L. Therefore,

I=ne2AτmLVI = \frac{n e^2 A \tau}{mL}V

This has the form I=V/RI = V/R, so:

R=mLne2AτR = \frac{mL}{n e^2 A \tau}

Since R=ρL/AR = \rho L/A,

ρ=mne2τ\boxed{\, \rho = \frac{m}{n e^2 \tau} \, }

Physical meaning. Resistivity depends on microscopic quantities: carrier density nn and relaxation time τ\tau.

Q17. Derive the expression V=εIrV = \varepsilon - Ir for the terminal voltage of a cell delivering current II through an external resistance RR. [Important] [Diagram required]

Setup. A cell of EMF ε\varepsilon and internal resistance rr is connected across an external resistance RR. Current II flows in the circuit.

Derivation. Apply Kirchhoff's loop rule:

+εIrIR=0+\varepsilon - Ir - IR = 0

Hence, I=εR+rI = \frac{\varepsilon}{R + r}

The terminal voltage VV equals the potential difference across the external resistor:

V=IRV = IR

So,

V=εIr\boxed{\, V = \varepsilon - Ir \, }

Physical meaning. The terminal voltage is less than the EMF by the lost volts IrIr while the cell is discharging.

Q18. Derive the equivalent EMF and internal resistance of two cells connected in series (aiding). [Diagram required]

Setup. Two cells with EMFs ε1,ε2\varepsilon_1, \varepsilon_2 and internal resistances r1,r2r_1, r_2 are connected in series aiding each other.

Derivation. If current II flows through external resistance RR, then:

ε1+ε2I(r1+r2)IR=0\varepsilon_1 + \varepsilon_2 - I(r_1 + r_2) - IR = 0

Comparing with an equivalent single-cell form,

εeqIreqIR=0\varepsilon_{\text{eq}} - Ir_{\text{eq}} - IR = 0

we get:

εeq=ε1+ε2,req=r1+r2\boxed{\, \varepsilon_{\text{eq}} = \varepsilon_1 + \varepsilon_2, \quad r_{\text{eq}} = r_1 + r_2 \, }

If the cells oppose, EMFs subtract algebraically but internal resistances still add.

Q19. Derive the equivalent EMF and internal resistance of two cells connected in parallel. [Important] [Diagram required] [CBSE]

Setup. Two cells with EMFs ε1,ε2\varepsilon_1, \varepsilon_2 and internal resistances r1,r2r_1, r_2 are connected in parallel.

Let terminal voltage be VV. Then,

V=ε1I1r1=ε2I2r2V = \varepsilon_1 - I_1r_1 = \varepsilon_2 - I_2r_2

So,

I1=ε1Vr1,I2=ε2Vr2I_1 = \frac{\varepsilon_1 - V}{r_1}, \qquad I_2 = \frac{\varepsilon_2 - V}{r_2}

Total current:

I=I1+I2=ε1Vr1+ε2Vr2I = I_1 + I_2 = \frac{\varepsilon_1 - V}{r_1} + \frac{\varepsilon_2 - V}{r_2}

Rearranging into equivalent-cell form gives:

εeq=ε1/r1+ε2/r21/r1+1/r2,1req=1r1+1r2\boxed{\, \varepsilon_{\text{eq}} = \frac{\varepsilon_1/r_1 + \varepsilon_2/r_2}{1/r_1 + 1/r_2}, \quad \frac{1}{r_{\text{eq}}} = \frac{1}{r_1} + \frac{1}{r_2} \, }

Physical meaning. The parallel combination has a weighted-average EMF and a smaller effective internal resistance.

Q20. Derive the balance condition of a Wheatstone bridge using Kirchhoff's rules. [Important] [CBSE]

Setup. Four resistors P,Q,R,SP, Q, R, S form a diamond; a battery is connected across one diagonal and a galvanometer across the other.

At balance, galvanometer current is zero, so current I1I_1 flows through PP and QQ, and current I2I_2 flows through RR and SS.

Since the potentials at the galvanometer junctions are equal,

I1P=I2RI_1P = I_2R

and

I1Q=I2SI_1Q = I_2S

Dividing,

PQ=RS\boxed{\, \frac{P}{Q} = \frac{R}{S} \, }

Physical meaning. The bridge balance depends only on the resistance ratios, not on the battery EMF or galvanometer resistance.

Q21. Derive the meter bridge formula for an unknown resistance. [Diagram required]

Setup. A 1-metre-long uniform wire is used as two ratio arms. A known resistance RR is in one gap and an unknown resistance XX in the other. Let the balance length from the left end be \ell cm.

Since the wire is uniform, resistance is proportional to length. Therefore, the ratio arms are:

P,Q100P \propto \ell, \qquad Q \propto 100 - \ell

Using the Wheatstone balance condition:

100=RX\frac{\ell}{100 - \ell} = \frac{R}{X}

Hence,

X=R100\boxed{\, X = R \cdot \frac{100 - \ell}{\ell} \, }

Physical meaning. The absolute resistance per unit length of the wire cancels out, leaving only the measurable length ratio.

Q22. Derive the formula r=R(12)/2r = R(\ell_1 - \ell_2)/\ell_2 for measuring the internal resistance of a cell using a potentiometer. [Important] [Diagram required] [CBSE]

Step 1 — Key open. No current is drawn from the cell, so the terminal voltage equals its EMF:

ε=k1\varepsilon = k\ell_1

Step 2 — Key closed. A resistance RR is connected across the cell. The terminal voltage becomes

V=εRR+rV = \varepsilon \cdot \frac{R}{R+r}

and this balances at length 2\ell_2:

V=k2V = k\ell_2

Divide the two equations:

12=εV=R+rR\frac{\ell_1}{\ell_2} = \frac{\varepsilon}{V} = \frac{R+r}{R}

Therefore,

r=R122\boxed{\, r = R \cdot \frac{\ell_1 - \ell_2}{\ell_2} \, }

Physical meaning. Internal resistance is obtained from a known resistor and two balance lengths only.

LA — 5 marks

Q23. With a neat circuit diagram, describe the working of a potentiometer for comparing EMFs of two cells. Derive the relevant formula. [Important] [Diagram required] [CBSE]

Principle. A steady current through a uniform wire produces a potential drop directly proportional to length:

V=kV = k\ell

where kk is the potential gradient.

Working. Let two cells of EMFs ε1\varepsilon_1 and ε2\varepsilon_2 balance at lengths 1\ell_1 and 2\ell_2 respectively, with the same potentiometer setting.

Then,

ε1=k1,ε2=k2\varepsilon_1 = k\ell_1, \qquad \varepsilon_2 = k\ell_2

Dividing,

ε1ε2=12\boxed{\, \frac{\varepsilon_1}{\varepsilon_2} = \frac{\ell_1}{\ell_2} \, }

Why it is accurate:

  • It is a null method.
  • No current is drawn from the test cells at balance.
  • Galvanometer resistance does not matter.
  • The gradient cancels while comparing EMFs.

Precautions:

  • Driver cell must have EMF greater than the test cells.
  • Positive terminals must be connected correctly.
  • The potentiometer current must remain steady.

Q24. With a neat circuit diagram, describe the construction and working of a meter bridge to determine an unknown resistance. Derive the balance formula and state any two precautions. [Important] [Diagram required] [CBSE]

Construction.

  • A 1-metre-long uniform resistance wire is stretched along a wooden scale.
  • The two end gaps hold the known resistance RR and the unknown resistance XX.
  • A battery, key, and rheostat drive current through the wire.
  • A galvanometer and jockey are used to locate the null point.

Working. At the null point, let the length from the left end be \ell cm. Then the two wire segments have resistances proportional to \ell and 100100-\ell.

Applying the Wheatstone bridge condition:

100=RX\frac{\ell}{100-\ell} = \frac{R}{X}

Hence,

X=R100\boxed{\, X = R \cdot \frac{100-\ell}{\ell} \, }

Precautions:

  1. The null point should be near the middle for best accuracy.
  2. The jockey should be pressed lightly.
  3. The wire should not be overheated.
  4. Connections should be tight and clean.

Q25. Draw a labelled circuit diagram of a potentiometer for measuring the internal resistance of a cell. Derive the expression for internal resistance. [Diagram required] [CBSE]

Working. With the shunt key open, the balance length is 1\ell_1:

ε=k1\varepsilon = k\ell_1

With a known resistor RR connected across the cell, the balance length becomes 2\ell_2 and terminal voltage is:

V=k2=εRR+rV = k\ell_2 = \varepsilon \cdot \frac{R}{R+r}

Dividing,

12=R+rR\frac{\ell_1}{\ell_2} = \frac{R+r}{R}

Therefore,

r=R122\boxed{\, r = R \cdot \frac{\ell_1 - \ell_2}{\ell_2} \, }

Precautions:

  1. Use a suitable resistor RR.
  2. Close the key only briefly.
  3. Keep the driver current steady.

Q26. Describe an experiment to verify Ohm's law for a metallic conductor, including circuit diagram, procedure, observations, and graph. [Diagram required]

Aim. To verify Ohm's law for a metallic conductor.

Apparatus. Resistance wire, battery, ammeter, voltmeter, rheostat, key, connecting wires.

Procedure.

  1. Connect the ammeter in series and voltmeter in parallel with the conductor.
  2. Vary the current using the rheostat.
  3. Record corresponding values of current and voltage.
  4. Plot the graph of VV versus II.

Observation. The graph is a straight line through the origin.

Therefore,

VIV=IRV \propto I \Rightarrow V = IR

The slope of the graph gives the resistance.

Precautions:

  1. Avoid heating the conductor.
  2. Make proper circuit connections.
  3. Take several observations.

Q27. State Kirchhoff's rules. Using these rules, derive the balance condition of a Wheatstone bridge. [Important] [Diagram required] [CBSE]

Kirchhoff's rules:

  • Junction rule: algebraic sum of currents at a junction is zero.
  • Loop rule: algebraic sum of potential differences in a closed loop is zero.

For a Wheatstone bridge at balance, the galvanometer current is zero. Hence the currents through opposite arms satisfy:

I1P=I2RI_1P = I_2R I1Q=I2SI_1Q = I_2S

Dividing,

PQ=RS\boxed{\, \frac{P}{Q} = \frac{R}{S} \, }

Physical significance. The bridge balance depends only on resistance ratios and is therefore highly accurate.

Numericals

Q28. A wire is stretched to double its length, keeping the volume constant. How does its resistance change? [Important]

Since volume ALAL remains constant, doubling the length halves the area.

Original resistance: R=ρLAR = \rho \frac{L}{A}

New resistance: R=ρ2LA/2=4RR' = \rho \frac{2L}{A/2} = 4R

Answer: The resistance becomes 4 times the original.

Key idea: When volume is constant, resistance varies as the square of the length.

Q29. Three resistors of resistance RR each are connected first in series and then in parallel. Find the ratio of power dissipated in the two combinations (for the same applied voltage VV).

For series: Rs=3R,Ps=V23RR_s = 3R, \qquad P_s = \frac{V^2}{3R}

For parallel: Rp=R3,Pp=V2R/3=3V2RR_p = \frac{R}{3}, \qquad P_p = \frac{V^2}{R/3} = \frac{3V^2}{R}

Hence,

PsPp=19\frac{P_s}{P_p} = \frac{1}{9}

Answer: Pseries:Pparallel=1:9P_{series} : P_{parallel} = 1 : 9.

Q30. Two cells of EMFs 1.5 V and 2 V with internal resistances 1 Ω and 2 Ω respectively are connected in parallel across a 10-Ω external resistor. Find: (a) the equivalent EMF, (b) the equivalent internal resistance, (c) the current through the 10-Ω resistor.

(a) Equivalent EMF: εeq=1.5/1+2/21/1+1/2=2.51.51.67 V\varepsilon_{eq} = \frac{1.5/1 + 2/2}{1/1 + 1/2} = \frac{2.5}{1.5} \approx 1.67\text{ V}

(b) Equivalent internal resistance: req=1×21+2=230.67 Ωr_{eq} = \frac{1 \times 2}{1+2} = \frac{2}{3} \approx 0.67\text{ Ω}

(c) Current: I=1.6710+0.670.156 AI = \frac{1.67}{10 + 0.67} \approx 0.156\text{ A}

Answer: εeq1.67\varepsilon_{eq} \approx 1.67 V, req0.67r_{eq} \approx 0.67 Ω, I0.156I \approx 0.156 A.

Q31. A battery of EMF 10 V and internal resistance 3 Ω is connected to a resistor. If the current in the circuit is 0.5 A, find (a) the resistance of the resistor, (b) the terminal voltage of the battery. [Important] [CBSE]

Total circuit resistance: Rtotal=εI=100.5=20 ΩR_{total} = \frac{\varepsilon}{I} = \frac{10}{0.5} = 20\text{ Ω}

Therefore, R=203=17 ΩR = 20 - 3 = 17\text{ Ω}

Terminal voltage: V=εIr=100.5×3=8.5 VV = \varepsilon - Ir = 10 - 0.5 \times 3 = 8.5\text{ V}

Answers: R=17R = 17 Ω, V=8.5V = 8.5 V.

Cross-check: V=IR=0.5×17=8.5V = IR = 0.5 \times 17 = 8.5 V.

Q32. A heating element of an electric heater is rated at 1000 W / 220 V. Find (i) the current drawn, (ii) the resistance of the element.

(i) Current: I=PV=10002204.55 AI = \frac{P}{V} = \frac{1000}{220} \approx 4.55\text{ A}

(ii) Resistance: R=V2P=22021000=48.4 ΩR = \frac{V^2}{P} = \frac{220^2}{1000} = 48.4\text{ Ω}

Answers: I4.55I \approx 4.55 A, R=48.4R = 48.4 Ω.

Cross-check: V=IRV = IR and P=I2RP = I^2R.

Q33. State the condition for maximum power transfer from a cell to an external resistance. Derive the expression for the maximum power. [Important] [CBSE]

Power delivered to load:

PR=ε2R(R+r)2P_R = \frac{\varepsilon^2R}{(R+r)^2}

Differentiating with respect to RR and setting to zero gives:

R=rR = r

So the condition for maximum power transfer is:

R=r\boxed{R = r}

At this condition,

Pmax=ε24rP_{max} = \frac{\varepsilon^2}{4r}

Physical meaning. At maximum power transfer, half the power is lost inside the cell, so efficiency is only 50%.

Q34. Using Kirchhoff's rules, find the current in a single loop containing a 12-V cell, a 2-Ω resistor, an opposing 8-V cell, and a 4-Ω resistor in series. [CBSE]

Applying KVL:

+122I84I=0+12 - 2I - 8 - 4I = 0

4=6II=0.67 A4 = 6I \Rightarrow I = 0.67\text{ A}

The current is driven by the stronger 12-V cell, so the 8-V cell is being charged.

Answer: Current = 0.67 A.

Q35. In an experiment, the temperature coefficient of a resistance wire was found to be 4×1034 \times 10^{-3} /°C. At 20 °C, the resistance is 50 Ω. What is the resistance at 120 °C?

Using RT=R0[1+α(TT0)]R_T = R_0[1 + \alpha(T - T_0)]

R120=50[1+4×103(12020)]=50(1+0.4)=70 ΩR_{120} = 50[1 + 4 \times 10^{-3}(120 - 20)] = 50(1 + 0.4) = 70\text{ Ω}

Answer: R=70R = 70 Ω.

Resistance increases by 40% over this 100 °C range, which is typical of metals like copper.